Surface Mount Varistor

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MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Typical Applications • Automotive On Board C

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 220 nC) • High Speed Switching with Low Capacitance (Coss = 258 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, TO-247-4L

Features  Typical RDS(on) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100 Avalanche Tested  AEC−Q101 Qualified and PPAP Capable  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (

MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 114 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant

Silicon Carbide (SiC) MOSFET – EliteSiC, 53mohm, 1700V, M1, TO-247-4L

Features • Typ. RDS(on) = 53 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 98 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive

MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 30 A, 110 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

Silicon Carbide (SiC) MOSFET – EliteSiC, 192mohm, 1700V, M1, TO-247-4L

Features • Typ. RDS(on) = 192 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 31 nC) • High Speed Switching with Low Capacitance (Coss = 33 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive

Automotive 750 V, 640 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH640S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates four Field Stop 4 (FS4) 750 V Narrow Me

Automotive 750 V, 640 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH640S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates four Field Stop 4 (FS4) 750 V Narrow Me

Automotive 750 V, 660 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH660S75L4SPFB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Me

Automotive 750 V, 660 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH660S75L4SPFC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Me

Automotive 750 V, 680 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH680S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 680 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH680S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 820 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH820S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 820 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH820S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 820 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module

Product Description The NVH820S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPB is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Automotive 750 V, 950 A Single Side Direct Cooling 6-Pack Power Module VE-Tract Direct Module

Product Description The NVH950S75L4SPC is a power module from the VE−Trac Direct family of highly integrated power modules with industry standard footprints for Hybrid (HEV) and Electric Vehicle (EV) traction inverter application. The module integrates six Field Stop 4 (FS4) 750 V Narrow Mes

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (typ. QG(tot) = 203 nC) • Low Effective Output Capacitance (typ. Coss = 260 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (typ. QG(tot) = 203 nC) • Low Effective Output Capacitance (typ. Coss = 260 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 153 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (

MOSFET ??Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

MOSFET – Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

MOSFET – Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m

Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss prov

MOSFET ??Power, N-Channel, SUPERFET III, FRFET650 V, 75 A, 27.4 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-3L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (typ. Coss = 140 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inte

MOSFET ??Single N-Channel, SUPERFET V, FRFET 600 V, 40 m, 59 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, N-Channel, SUPERFET III, FRFET650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

MOSFET - Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Complia

MOSFET ??Power, N?륝hannel, SUPERFET III, FRFET 650 V, 50 m, 58 A

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

MOSFET ??Single N-Channel, SUPERFET V, FRFET 600 V, 55 m, 45 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Single N-Channel, SUPERFET III, FRFET 650 V, 46 A, 65 m

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant