Active power factor correction

文件：891.45 Kbytes Page：5 Pages

Single wire current sharing

文件：891.45 Kbytes Page：5 Pages

Active power factor correction

文件：725.2 Kbytes Page：3 Pages

包装：散装 描述：AC/DC CONVERTER 24V 200W 电源 - 外部/内部（板外） AC DC 转换器

200—350 Watt AC-DC Power Supplies

The NTS350 series of enclosed AC-DC power supplies comprises four single output models, providing standard voltages of 12 V, 24 V, 48 V or 54 V, plus 5V standby and 12 V fan outputs. All four models accept a universal input of 85–264 Vac and have a typical full load efficiency of 85%. Features i ·Low output ripple\n·Built in OR-ing diode / FET\n·Thermal overload protection\n·12 fan output\n·Overvoltage protection\n·Active power factor correction\n·IEC EN6100-3-2 compliance\n·Single wire current sharing\n·DC power good\n·Optional fan cover (-CF suffix)\n·Optional End fan cover (-CEF)\n·Super;

200—350 Watt AC-DC Power Supplies

The NTS350 series of enclosed AC-DC power supplies comprises four single output models, providing standard voltages of 12 V, 24 V, 48 V or 54 V, plus 5V standby and 12 V fan outputs. All four models accept a universal input of 85–264 Vac and have a typical full load efficiency of 85%. Features i ·Low output ripple\n·Built in OR-ing diode / FET\n·Thermal overload protection\n·12 fan output\n·Overvoltage protection\n·Active power factor correction\n·IEC EN6100-3-2 compliance\n·Single wire current sharing\n·DC power good\n·Optional fan cover (-CF suffix)\n·Optional End fan cover (-CEF)\n·Super;

包装：散装 描述：AC/DC CONVERTER 24V 200W 电源 - 外部/内部（板外） AC DC 转换器

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa