Power MOSFET

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Power MOSFET

文件：159.39 Kbytes Page：7 Pages

双 P 沟道功率 MOSFET -20V -4.1A 100mΩ

Power MOSFET

文件：159.39 Kbytes Page：7 Pages

Power MOSFET

文件：159.39 Kbytes Page：7 Pages

Power MOSFET

文件：88.37 Kbytes Page：7 Pages

Power MOSFET

文件：88.37 Kbytes Page：7 Pages

Power MOSFET

文件：159.39 Kbytes Page：7 Pages

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

Triple Video D/A Converters 3 x 10 bit, 150 Ms/s

Description FMS3110/3115 products are low-cost triple D/A converters. Features • 10-bit resolution • 150 megapixels per second • ± 0.1 linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low dist

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET