丝印代码：t04；Dual supply translating transceiver; auto direction sensing; 3-state

Dual supply translating transceiver; auto direction sensing; 3-state

Dual supply translating transceiver; auto direction sensing; 3-state

丝印代码：t04；Dual supply translating transceiver; auto direction sensing; 3-state

Dual supply translating transceiver; auto direction sensing; 3-state

封装/外壳：12-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 12WLCSP 集成电路（IC） 转换器，电平移位器

封装/外壳：12-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC TRNSLTR BIDIRECTIONAL 12WLCSP 集成电路（IC） 转换器，电平移位器

Silicon Schottky Barrier Diode for High Speed Switching

Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ωgain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in c

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan