型号 功能描述 生产厂家 企业 LOGO 操作
NT5DS64M8DS-6KI

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

Nanya

南亚科

512Mb DDR SDRAM

Feature z Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) z 4 internal memory banks for concurrent operation. z CAS Latency: 2, 2.5 and 3 z Double Data Rate Architecture z Bidirectional data strobe (DQS) is transmitted and received with data, to be used

Nanya

南亚科

更新时间:2025-11-5 10:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NANYA/南亚
23+
TSOP
50000
全新原装正品现货,支持订货
NANYA/南亚
25+
TSSOP
860000
明嘉莱只做原装正品现货
NANYA/南亚
0737+
TSOP-66
28992
进口原带现货
NANYA/南亚
24+
TSOP66
45310
只做全新原装进口现货
NANYA/南亚
24+
TSOP-66
21574
郑重承诺只做原装进口现货
NANYA
25+
TSOP
4500
原装正品!公司现货!欢迎来电!
NANYA
2016+
TSSOP
2600
只做原装,假一罚十,公司可开17%增值税发票!
17+
6200
100%原装正品现货
NANYA/南亚
21+
TSOP66
10000
原装现货假一罚十
NANYA
06+
TSOP-66
24
原装现货海量库存欢迎咨询

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