256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

256Mb DDR Synchronous DRAM

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

256Mb DDR Synchronous DRAM

Description NT5DS64M4CT, NT5DS32M8CT and NT5DS16M16CT, NT5DS64M4CS, NT5DS32M8CS and NT5DS16M16CS are 256Mb SDRAM devices based using a DDR interface. They are all based on Nanya’s 110 nm design process. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation.

256Mb DDR333/300 SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

256Mb Double Data Rate SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

256Mb DDR333/300 SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte

256Mb Double Data Rate SDRAM

[Nanya] Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. Features • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitte