The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available

The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology.

[Nanya] DESCRIPTION The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is available