Low VCE(sat) Transistor, Dual PNP, 40 V, 3.0 A

Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor

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Inductive Sensor

Features ■Threaded barrel, M12 x 1 ■Plastic, PA12‐GF30 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 at HFT0 ■SIL

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Cable assembly with T812 series connector w/SR

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Analog Output MEMS Microphone Flex Evaluation Board User Guide

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