型号 功能描述 生产厂家 企业 LOGO 操作
NSR02F30MX

200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

ONSEMI

安森美半导体

NSR02F30MX

200 mA,30 V,x3DFN 0201 肖特基势垒二极管

ONSEMI

安森美半导体

NSR02F30MX

Schottky Barrier Diode

文件:97.25 Kbytes Page:4 Pages

ONSEMI

安森美半导体

200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

ONSEMI

安森美半导体

200 mA, 30 V Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving x3DFN 0201 package ideal for space constraint applications. Features  Low Forward Voltage Drop

ONSEMI

安森美半导体

200 mA, 30 V Schottky Barrier Diode

文件:104.27 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

文件:97.25 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:0201(0603 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 30V 200MA 2DFN 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

更新时间:2026-3-16 17:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
26+
NA
60000
只有原装 可配单
ON(安森美)
23+
X3-DFN-2
18372
公司只做原装正品,假一赔十
ON
23+
X3-DFN3
20000
正规渠道,只有原装!
ON
22+
X3-DFN
20000
公司只做原装 品质保障
ON/安森美
2023+
SMD
8635
一级代理优势现货,全新正品直营店
ON(安森美)
2511
X3-DFN-2
6545
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
三年内
1983
只做原装正品
ON(安森美)
25+
标准封装
8800
公司只做原装,详情请咨询
ON(安森美)
24+
N/A
18000
原装正品现货支持实单

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