Schottky Power Rectifier, Surface Mount, 2.0 A, 30 V

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 2A 30V SMB2 分立半导体产品 二极管 - 整流器 - 单

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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