NRVBB1060价格
参考价格:¥2.4886
型号:NRVBB1060T4G 品牌:ON 备注:这里有NRVBB1060多少钱,2026年最近7天走势,今日出价,今日竞价,NRVBB1060批发/采购报价,NRVBB1060行情走势销售排行榜,NRVBB1060报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NRVBB1060 | Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Au | ONSEMI 安森美半导体 | ||
NRVBB1060 | 60 V,10 A,肖特基整流器 This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Low Forward Voltage\n• 175°C Operating Junction Temperature\n• Low Power Loss/High Efficiency\n• High Surge Capacity\n• This is a Pb-Free Device; | ONSEMI 安森美半导体 | ||
NRVBB1060 | SWITCHMODE Power Rectifier 文件:55.25 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | ||
NRVBB1060 | Switch-mode Power Rectifier 文件:69.68 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | ||
Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Au | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Au | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Au | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features Low Forward Voltage 175C Operating Junction Temperature Low Power Loss/High Efficiency High Surge Capacity For Au | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier 文件:69.68 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier 文件:69.68 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier 文件:55.25 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier 文件:69.68 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 10A 60V D2PAK-3 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | |||
Switch-mode Power Rectifier 文件:69.68 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
SWITCHMODE??Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | MOTOROLA 摩托罗拉 | |||
Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp Description: The NTE1060 is an integrated circuit designed for FM/AM radio receiver applications. The AM section consists of an AM–RF amplifier, a frequency converter and an IF amplifier circuit. The FM section has an IF amplifier circuit. Features: ● Improved Stability because the FM and AM Se | NTE | |||
SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere) FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. | PANJIT 強茂 | |||
2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |
NRVBB1060产品属性
- 类型
描述
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
60
- VF Max (V):
0.8
- IRM Max (µA):
100
- IO(rec) Max (A):
10
- IFSM Max (A):
150
- Package Type:
D2PAK-3/TO-263-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
D2PAK |
9550 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON/安森美 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
ON |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON |
25+ |
SOT-263 |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
onsemi(安森美) |
25+ |
D2PAK |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
22+ |
SOT-263 |
20000 |
||||
ON/安森美 |
21+ |
D2PAK |
8080 |
只做原装,质量保证 |
|||
ON |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
26+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
NRVBB1060规格书下载地址
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参数 参数值 包装 标准卷带 系列 汽车级,AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向(Vr)(最大值) 30V 电流 - 平均整流(Io) 1A 不同 If 时的电压 - 正向(Vf 410mV @ 1A 速度 快速恢复 = 200mA(Io) 反向恢复时间(trr) 快速恢复 = 200mA(Io) 不同Vr 时的电流 - 反向漏电流 1
2021-10-12
DdatasheetPDF页码索引
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