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NRVBB1060价格

参考价格:¥2.4886

型号:NRVBB1060T4G 品牌:ON 备注:这里有NRVBB1060多少钱,2026年最近7天走势,今日出价,今日竞价,NRVBB1060批发/采购报价,NRVBB1060行情走势销售排行榜,NRVBB1060报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NRVBB1060

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

ONSEMI

安森美半导体

NRVBB1060

60 V,10 A,肖特基整流器

This Schottky Rectifier uses the Schottky Barrier principle with a platinum barrier metal. • Low Forward Voltage\n• 175°C Operating Junction Temperature\n• Low Power Loss/High Efficiency\n• High Surge Capacity\n• This is a Pb-Free Device;

ONSEMI

安森美半导体

NRVBB1060

SWITCHMODE Power Rectifier

文件:55.25 Kbytes Page:5 Pages

ONSEMI

安森美半导体

NRVBB1060

Switch-mode Power Rectifier

文件:69.68 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

ONSEMI

安森美半导体

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

ONSEMI

安森美半导体

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

ONSEMI

安森美半导体

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件:69.68 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件:69.68 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:55.25 Kbytes Page:5 Pages

ONSEMI

安森美半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件:69.68 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 10A 60V D2PAK-3 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件:69.68 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MOTOROLA

摩托罗拉

Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp

Description: The NTE1060 is an integrated circuit designed for FM/AM radio receiver applications. The AM section consists of an AM–RF amplifier, a frequency converter and an IF amplifier circuit. The FM section has an IF amplifier circuit. Features: ● Improved Stability because the FM and AM Se

NTE

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity.

PANJIT

強茂

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2.5 V HIGH PRECISION REFERENCE VOLTAGE CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NRVBB1060产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    60

  • VF Max (V):

    0.8

  • IRM Max (µA):

    100

  • IO(rec) Max (A):

    10

  • IFSM Max (A):

    150

  • Package Type:

    D2PAK-3/TO-263-2

更新时间:2026-5-15 11:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
D2PAK
9550
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON/安森美
2022+
5000
只做原装,价格优惠,长期供货。
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
ON
25+
SOT-263
15000
原装原标原盒 给价就出 全网最低
onsemi(安森美)
25+
D2PAK
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
22+
SOT-263
20000
ON/安森美
21+
D2PAK
8080
只做原装,质量保证
ON
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
三年内
1983
只做原装正品
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择

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