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MBR1060价格
参考价格：￥2.7432
型号：MBR1060 品牌：Fairchild 备注：这里有MBR1060多少钱，2025年最近7天走势，今日出价，今日竞价，MBR1060批发/采购报价，MBR1060行情走势销售排行榜，MBR1060报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR1060 | SWITCHMODE??Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | Motorola 摩托罗拉 |   | |
MBR1060 | 10 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage d | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MBR1060 | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 10.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forwa | GE GE Industrial Company | | |
MBR1060 | 10A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Pro | DIODES 美台半导体 | | |
MBR1060 | 10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | | |
MBR1060 | SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T | ONSEMI 安森美半导体 | | |
MBR1060 | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage protection | PANJIT 強茂 | | |
MBR1060 | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Applic | SENSITRON | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov | BILIN 银河微电 | | |
MBR1060 | 10A Schottky Barrier Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guarding for over voltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | TAITRON | | |
MBR1060 | Schottky Barrier Rectifier FEATURES • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AC and ITO-220AC package) • Component in | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high frequency inverters, free wheeling, and pol | SYNSEMI | | |
MBR1060 | 10Amp schottky barrier rectifier 20to100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | | |
MBR1060 | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A Reverse Voltage 40 to 200 V Forward Current 10 A Features • Low Power Loss，High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard | DACHANG 大昌电子 | | |
MBR1060 | Schottky Barrier Rectifiers FEATURES Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in low voltage, high frequency inverters, free wheeling, | SSC Silicon Standard Corp. | | |
MBR1060 | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 10 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | PANJIT 強茂 | | |
MBR1060 | SCHOTTKY BARRIER DIODE FEATURES ● Common cathode structure ● Low power loss, high efficiency ● High Operating Junction Temperature ● Guard ring for overvoltage protection， High reliability ● RoHS product APPLICATIONS ● High frequency switch power supply ● Free wheeling diodes, polarity protection applications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | |
MBR1060 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • | MCC 美微科 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma | HY | | |
MBR1060 | 10.0AMPS.Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | | |
MBR1060 | Metal of silicon rectifier , majority carrier conduction Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | | |
MBR1060 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1060 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBR1060 | 10A SCHOTTKY BARRIER RECTIFIER Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK | | |
MBR1060 | Product Specification Features ◆ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring for overvoltage protection ◆ For use in low voltage, high frequency inverters, free wheeling, and polar | Good-Ark 固锝电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | | |
MBR1060 | Schottky Barrier Rectifier 10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi | FORMOSA 美丽微半导体 | | |
MBR1060 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | | |
MBR1060 | SCHOTTKY RECTIFERS SCHOTTKY RECTIFERS | DIGITRON | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBR1060 | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | | |
MBR1060 | Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBR1060 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin | JIANGSU 长电科技 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogniti | SAMYANG 三阳电子 | | |
MBR1060 | SCHOTTKY RECTIFIER Applications Switching power supply Redundant power subsystems Converters Free-Wheeling diodes Reverse battery protection Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resi | SMCDIODE 桑德斯微电子 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SY 顺烨电子 | | |
MBR1060 | Schottky Barrier Recitifiers 文件：443.35 Kbytes Page：3 Pages | HY | | |
MBR1060 | 封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 10A TO220-2 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
MBR1060 | 封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 60V 10A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER 文件：292.94 Kbytes Page：3 Pages | HORNBY 南通康比电子 | | |
MBR1060 | Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts , Forward Current 10.0 Amperes 文件：319.37 Kbytes Page：3 Pages | FS | | |
MBR1060 | Schottky Barrier Rectifier 文件：148.84 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR1060 | Schottky Barrier Rectifiers 文件：1.37841 Mbytes Page：2 Pages | JUXING 广东钜兴电子 | | |
MBR1060 | Voltage Range 35 to 200 Volts Current 10.0 Amperes 文件：332.05 Kbytes Page：2 Pages | GXELECTRONICS 星合电子 | | |
MBR1060 | Schottky Barrier Rectifier 文件：151.78 Kbytes Page：2 Pages | DACHANG 大昌电子 | | |
MBR1060 | High Tjm Low IRRM Schottky Barrier Diodes 文件：89.5 Kbytes Page：2 Pages | SIRECTIFIER 矽莱克电子 | | |
MBR1060 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 文件：59.08 Kbytes Page：2 Pages | KERSEMI | | |
MBR1060 | 10.0A SCHOTTKY BARRIER DIODE 文件：324.14 Kbytes Page：2 Pages | ZSELEC 淄博圣诺电子 | | |
MBR1060 | LOW POWER LOSS HIGH EFFICIENCY 文件：247.07 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
MBR1060 | SCHOTTKY BARRIER RECTIFIER 文件：1.23352 Mbytes Page：2 Pages | CHENDA 辰达半导体 | | |
MBR1060 | Dual rectifier construction, positive center tap 文件：2.46603 Mbytes Page：6 Pages | Surge | | |
MBR1060 | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件：434.48 Kbytes Page：3 Pages | MCC 美微科 | | |
MBR1060 | Schottky Barrier Rectifier 文件：226.11 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBR1060 | SWITCHMODE Power Rectifiers 文件：130.06 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | |
MBR1060产品属性
- 类型
描述
- 型号
MBR1060
- 功能描述
肖特基二极管与整流器 10A 60V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
标准封装 |
7068 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
ON(安森美) |
24+ |
标准封装 |
12048 |
全新原装正品/价格优惠/质量保障 |
|||
GS |
2016+ |
TO-220-2 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
HOLTEK |
23+ |
SOT |
12000 |
全新原装假一赔十 |
|||
BCD/DIODES |
15+ |
TO-220 |
1760 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LITEON/光宝 |
25+ |
TO220-3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON |
24+ |
TO-220-2 |
25000 |
ON全系列可订货 |
|||
M |
24+ |
TO 220 |
157371 |
明嘉莱只做原装正品现货 |
|||
UTC |
2024+ |
TO-220铁头 |
500000 |
诚信服务,绝对原装原盘 |
|||
ON/安森美 |
25+ |
TO-220 |
32360 |
ON/安森美全新特价MBR1060G即刻询购立享优惠#长期有货 |
MBR1060规格书下载地址
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2019-2-25
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