Suitable for linear and saturated applications

文件：1.54461 Mbytes Page：9 Pages

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes Page：9 Pages

封装/外壳：TO-272BC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HEMT N-CH 48V 50W DC-2.2GHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

GaN Wideband Transistor 48 V, 45 W

Suitable for linear and saturated applications

文件：1.54461 Mbytes Page：9 Pages

Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT

文件：951.47 Kbytes Page：4 Pages

Suitable for linear and saturated applications

文件：1.54461 Mbytes Page：9 Pages

包装：盒 描述：EVAL BOARD FOR NPT2021 开发板，套件，编程器 射频评估和开发套件，开发板

N-Channel, 20V, 0.89A, Small Signal MOSFET

Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23/323 Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift

FIXED SIP DELAY LINE TR 1ns

FUNCTIONAL DESCRIPTION The 2020- and 2021-series devices are fixed, single-input, single-output, passive delay lines. The signal input (IN) is reproduced at the output (OUT), shifted by a time (TD) given by the device dash number. The characteristic impedance of the lines is nominally 50 ohms. Th

TOKEN RING MAGNETICS

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Snap Bushings

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PCB footprint

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