GaN Wideband Power Amplifier, 28 V, 12.5 W

文件：1.57427 Mbytes Page：13 Pages

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes Page：9 Pages

GaN Amplifier 28 V, 12 W, 0.020 - 1.0 GHz

GaN Amplifier 28 V, 12.5 W 20 - 1000 MHz

GaN Wideband Power Amplifier, 28 V, 12.5 W

文件：1.57427 Mbytes Page：13 Pages

包装：盒 描述：EVAL BOARD FOR NPA1006 开发板，套件，编程器 射频评估和开发套件，开发板

Photo Interrupter

Photo Interrupter For contactless SW, object detection ■ Overview CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. Th

Integrated Circuit FM Multiplex Stereo Demodulator

Description: The NTE1006 is an integrated circuit in a 14–Lead DIP type package designed for use as an FM multiplex stereo demodulator. This device includes all the fundamental functions including a composite amp, doubler, decoder, separation controller, and lamp driver. Features: ● Suitable fo

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages

uP Compatible, Double-Buffered D to A Converters

文件：369.16 Kbytes Page：22 Pages