| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | MOTOROLA 摩托罗拉 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
MOT |
22+ |
TO-220 |
20000 |
公司只做原装 品质保障 |
|||
ON/安森美 |
23+ |
TO-220 |
15500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
TO-220 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
||||
N/A |
24+ |
TO220 |
12940 |
只做原装正品假一赔十可含税 |
|||
MOT |
05+ |
TO-220 |
3000 |
原装进口 |
|||
MOT |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
MOT |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
MOT |
24+ |
TO-220 |
25836 |
新到现货,只做全新原装正品 |
NP50N06AG规格书下载地址
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深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号: NP16N06QLK-E1-AY 类别 分立半导体产品 晶体管 - FET,MOSFET - 阵列 制造商 Renesas Electronics America Inc 封装:8-PowerL
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DdatasheetPDF页码索引
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