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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:NP34;TinyLogic ULP-A Triple Buffer

The NC7NP34 is a triple buffer in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 2.7 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports Partial Power Down Prot

ONSEMI

安森美半导体

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2

RENESAS

瑞萨

30V N-Channel Enhancement Mode MOSFET

NATLINEAR

南麟

MOSFET

NATLINEAR

南麟

MOSFET

NATLINEAR

南麟

N-Channel 60 V (D-S) MOSFET

文件:960.09 Kbytes Page:7 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件:68.29 Kbytes Page:8 Pages

NEC

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件:68.29 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

文件:297.2 Kbytes Page:9 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP34产品属性

  • 类型

    描述

  • 封装形式:

    SOT-23-3L

  • Vds(V):

    30

  • ID(A)25°C:

    7

  • VGS(±V):

    12

  • Rdson@4.5V Tpy(mΩ):

    14

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
US-8
18746
样件支持,可原厂排单订货!
onsemi(安森美)
25+
US8
3591
原装现货,免费供样,技术支持,原厂对接
FAIRCHI
24+
USP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
三年内
1983
只做原装正品
FAIRCHILD
22+
USP-8
20000
公司只做原装 品质保障
FSC/ON
23+
原包装原封 □□
5497
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
FAIRCHILD/仙童
2450+
NA
9850
只做原装正品现货!或订货假一赔十!
FSC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
ON/安森美
25+
SMD
20000
原装
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税

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