| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:NP34;TinyLogic ULP-A Triple Buffer The NC7NP34 is a triple buffer in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 2.7 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports Partial Power Down Prot | ONSEMI 安森美半导体 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A) • Low Cis | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 34A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 | RENESAS 瑞萨 | |||
30V N-Channel Enhancement Mode MOSFET | NATLINEAR 南麟 | |||
MOSFET | NATLINEAR 南麟 | |||
MOSFET | NATLINEAR 南麟 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.09 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件:68.29 Kbytes Page:8 Pages | NEC 瑞萨 | |||
N-Channel 60 V (D-S) MOSFET 文件:960.08 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件:68.29 Kbytes Page:8 Pages | NEC 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET 文件:297.2 Kbytes Page:9 Pages | RENESAS 瑞萨 | |||
Product Scout Automotive 文件:5.67799 Mbytes Page:6 Pages | RENESAS 瑞萨 | |||
Product Scout Automotive 文件:5.67799 Mbytes Page:6 Pages | RENESAS 瑞萨 |
NP34产品属性
- 类型
描述
- 封装形式:
SOT-23-3L
- Vds(V):
30
- ID(A)25°C:
7
- VGS(±V):
12
- Rdson@4.5V Tpy(mΩ):
14
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
US-8 |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
US8 |
3591 |
原装现货,免费供样,技术支持,原厂对接 |
|||
FAIRCHI |
24+ |
USP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD |
22+ |
USP-8 |
20000 |
公司只做原装 品质保障 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
5497 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
|||
FAIRCHILD/仙童 |
2450+ |
NA |
9850 |
只做原装正品现货!或订货假一赔十! |
|||
FSC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
NP34规格书下载地址
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DdatasheetPDF页码索引
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