1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 1MBIT PARALLEL 32TSOP 集成电路（IC） 存储器

1 Megabit 128K x 8 Low Voltage OTP CMOS EPROM

Description The AT27LV010A is a high-performance, low-power, low-voltage 1,048,576-bit one time programmable read-only memory (OTP EPROM) organized as 128K by 8 bits. It requires only one supply in the range of 3.0V to 3.6V in normal read mode operation, making it ideal for fast, portable systems

1-Megabit (128K x 8) Low Voltage OTP EPROM

文件：375.79 Kbytes Page：15 Pages

Dual voltage range operation

文件：785.62 Kbytes Page：12 Pages