封装/外壳：32-LCC（J 形引线） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 4MBIT PARALLEL 32PLCC 集成电路（IC） 存储器

封装/外壳：32-LCC（J 形引线） 包装：卷带（TR）剪切带（CT） 描述：IC EPROM 4MBIT PARALLEL 32PLCC 集成电路（IC） 存储器

4,194,304-Bit (512K x 8) High Performance CMOS EPROM

General Description The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature on VPP dur

4 MEG COMS EPROM(512K x 8)

4 MEG CMOS EPROM (512K x 8)

4,194,304-Bit 512K x 8 High Performance CMOS EPROM

General Description The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature on VPP dur

4-Megabit 512K x 8 OTP EPROM

Description The AT27C040 chip is a low-power, high-performance, 4,194,304-bit one-time programmable read-only memory (OTP EPROM) organized as 512K by 8 bits. The AT27C040 requires only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 70 ns, eliminating the

4 Megabit (512 K x 8-Bit) CMOS EPROM

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