CSeriesAnalogInputModules

文件：1.51274 Mbytes Page：6 Pages

CSeriesAnalogOutputModules

文件：1.34575 Mbytes Page：5 Pages

CSeriesDigitalInputandCounter/TimerModules

文件：451.73 Kbytes Page：5 Pages

CSeriesDigitalOutputandRelayModules

文件：1.68285 Mbytes Page：6 Pages

8Ch,짹20mA,200kS/s,16-BitCSeriesAnalogCurrentInputModule

文件：408.98 Kbytes Page：8 Pages

RS232/423LowCap,#24-7c,FPE,O/AFoilBraid,PVCJkt,CM

ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket.

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

SimpleDriveRequirement,FullBridgeApplicationonLCDMonitorInverter

文件：99.35 Kbytes Page：7 Pages