型号 功能描述 生产厂家 企业 LOGO 操作
GAPM9932

Mini size of Discrete semiconductor elements

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Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • P-Channel -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • P-Channel -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free

ANPEC

茂达电子

GAPM9932产品属性

  • 类型

    描述

  • 型号

    GAPM9932

  • 功能描述

    Mini size of Discrete semiconductor elements

更新时间:2026-3-14 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HUAWEI
14+
DIP
10000
14+
SCR
23+
NA
293
专做原装正品,假一罚百!
HUAWEI
18+
186
全新 发货1-2天
SEIKO
17+
SOT23-5
6200
100%原装正品现货
SEIKO
16+
SOT23-5
10000
进口原装现货/价格优势!
HUAWEI
24+
DIP
39500
进口原装现货 支持实单价优
HW
23+
6500
专注配单,只做原装进口现货
SEIKO
23+
SOT23-5
27577
##公司主营品牌长期供应100%原装现货可含税提供技术
OSRAM OPTO
23+
NA
6000
原装现货 库存特价/长期供应元器件代理经销
HUAWEI/华为
24+
60000
全新原装现货

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