C Series Digital Output and Relay Modules

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C Series Analog Input Modules

文件：1.51274 Mbytes Page：6 Pages

C Series Analog Output Modules

文件：1.34575 Mbytes Page：5 Pages

C Series Digital Input and Counter/Timer Modules

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Sound and Vibration Data Acquisition

文件：544.02 Kbytes Page：6 Pages

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Analog Signal Processor ASP for CD players?

Analog Signal Processor ASP for CD players

Analog Signal Processor ASP for CD players?

Analog Signal Processor ASP for CD players