IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

IGBT, 1200V 40A FS2 Solar/UPS

IGBT，1200V，场截止 II，40 A

IGBT - Field Stop II / 4 Lead

文件：158.84 Kbytes Page：10 Pages

IGBT - Field Stop II

文件：151.57 Kbytes Page：10 Pages

封装/外壳：TO-247-3 包装：散装 描述：IGBT TRENCH/FS 1200V 80A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，超场截止 -1200V 40A

IGBT - Ultra Field Stop

文件：159.31 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 160A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT

文件：190.3 Kbytes Page：10 Pages

IGBT

文件：162.44 Kbytes Page：8 Pages

IGBT with Monolithic Free Wheeling Diode

文件：182.89 Kbytes Page：10 Pages

IGBT - Ultra Field Stop

文件：160.98 Kbytes Page：11 Pages

IGBT

文件：177.8 Kbytes Page：9 Pages

IGBT - Ultra Field Stop

文件：162.79 Kbytes Page：11 Pages

IGBT - Inverter Welding

文件：89.94 Kbytes Page：5 Pages

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

Extremely enhanced avalanche capability

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High system

1200V NPT IGBT

Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

IGBT

文件：162.44 Kbytes Page：8 Pages

IGBT

文件：162.44 Kbytes Page：8 Pages