NGTB40N价格

参考价格:¥32.3732

型号:NGTB40N120FL2WG 品牌:ONSemi 备注:这里有NGTB40N多少钱,2026年最近7天走势,今日出价,今日竞价,NGTB40N批发/采购报价,NGTB40N行情走势销售排行榜,NGTB40N报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:40N120FL2;IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

ONSEMI

安森美半导体

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

ONSEMI

安森美半导体

丝印代码:40N120FL3;IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

ONSEMI

安森美半导体

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol

ONSEMI

安森美半导体

丝印代码:40N120FL;IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

ONSEMI

安森美半导体

IGBT

Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS

ONSEMI

安森美半导体

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

ONSEMI

安森美半导体

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar

ONSEMI

安森美半导体

IGBT with Monolithic Reverse Conducting Diode

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat)

ONSEMI

安森美半导体

IGBT, 1200V 40A FS2 Solar/UPS

ONSEMI

安森美半导体

IGBT,1200V,场截止 II,40 A

ONSEMI

安森美半导体

IGBT - Field Stop II / 4 Lead

文件:158.84 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:151.57 Kbytes Page:10 Pages

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:散装 描述:IGBT TRENCH/FS 1200V 80A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

IGBT,超场截止 -1200V 40A

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 160A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

IGBT - Ultra Field Stop

文件:159.31 Kbytes Page:11 Pages

ONSEMI

安森美半导体

IGBT

文件:190.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT

文件:162.44 Kbytes Page:8 Pages

ONSEMI

安森美半导体

IGBT with Monolithic Free Wheeling Diode

文件:182.89 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Ultra Field Stop

文件:160.98 Kbytes Page:11 Pages

ONSEMI

安森美半导体

IGBT

文件:177.8 Kbytes Page:9 Pages

ONSEMI

安森美半导体

IGBT - Ultra Field Stop

文件:162.79 Kbytes Page:11 Pages

ONSEMI

安森美半导体

IGBT - Inverter Welding

文件:89.94 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Monolithic Free Wheeling Diode

文件:183.67 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:146.43 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:145.15 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:145.15 Kbytes Page:10 Pages

ONSEMI

安森美半导体

丝印代码:40N60FL;IGBT

文件:247.74 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor (IGBT)

文件:184.19 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT

文件:97.75 Kbytes Page:8 Pages

ONSEMI

安森美半导体

IGBT

文件:97.74 Kbytes Page:8 Pages

ONSEMI

安森美半导体

IGBT

文件:97.74 Kbytes Page:8 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:146.54 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:145.25 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT - Field Stop II

文件:145.25 Kbytes Page:10 Pages

ONSEMI

安森美半导体

IGBT

文件:181.1 Kbytes Page:9 Pages

ONSEMI

安森美半导体

IGBT with Monolithic Reverse Conducting Diode

文件:132.89 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NGTB40N产品属性

  • 类型

    描述

  • 型号

    NGTB40N

  • 制造商

    ON Semiconductor

  • 功能描述

    1200V/40A FAST IGBT FSII - Rail/Tube

  • 制造商

    ON Semiconductor

  • 功能描述

    IGBT 1200V 80A 535W TO247

更新时间:2026-3-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
25+
-
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
ON(安森美)
2511
标准封装
8000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ONSEMI/安森美
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
ON
22+
TO-3P
20000
公司只做原装 品质保障
ON/安森美
18+
NA
28683
原装现货支持BOM配单服务
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
ON
18+
TO-3P
240
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-3P
240
正规渠道,只有原装!
ON/安森美
21+
NA
12820
只做原装,质量保证

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