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NGTB40N价格
参考价格：￥32.3732
型号：NGTB40N120FL2WG 品牌：ONSemi 备注：这里有NGTB40N多少钱，2025年最近7天走势，今日出价，今日竞价，NGTB40N批发/采购报价，NGTB40N行情走势销售排行榜，NGTB40N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar | ONSEMI 安森美半导体 |   | ||
IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar | ONSEMI 安森美半导体 | | ||
IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol | ONSEMI 安森美半导体 | | ||
IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and sol | ONSEMI 安森美半导体 | | ||
IGBT Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS | ONSEMI 安森美半导体 | | ||
IGBT Features • Low Saturation Voltage using NPT Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • 10 s Short Circuit Capability • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Solar Inverter • UPS | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar | ONSEMI 安森美半导体 | | ||
IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II / 4 Lead 文件：158.84 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：151.57 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：散装 描述：IGBT TRENCH/FS 1200V 80A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 160A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
IGBT - Ultra Field Stop 文件：159.31 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：190.3 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：162.44 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
IGBT | ONSEMI 安森美半导体 | | ||
IGBT with Monolithic Free Wheeling Diode 文件：182.89 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Ultra Field Stop 文件：160.98 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：177.8 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
IGBT | ONSEMI 安森美半导体 | | ||
IGBT - Ultra Field Stop 文件：162.79 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Inverter Welding 文件：89.94 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Monolithic Free Wheeling Diode 文件：183.67 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT, 600V 40A Solar/UPS | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：146.43 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：145.15 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：145.15 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：247.74 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor (IGBT) 文件：184.19 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：97.75 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：97.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：97.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：145.25 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：146.54 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT - Field Stop II 文件：145.25 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
IGBT 文件：181.1 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
IGBT with Monolithic Reverse Conducting Diode 文件：132.89 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
NGTB40N产品属性
- 类型
描述
- 型号
NGTB40N
- 制造商
ON Semiconductor
- 功能描述
1200V/40A FAST IGBT FSII - Rail/Tube
- 制造商
ON Semiconductor
- 功能描述
IGBT 1200V 80A 535W TO247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
25+ |
TO247 |
78900000 |
原厂直接发货进口原装 |
|||
ON/安森美 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
ONSEMI/安森美 |
1901 |
TO-247 |
958 |
原装现货 价格优势 |
|||
ON(安森美) |
24+ |
TO-247 |
7658 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON |
25+ |
TO-247 |
6000 |
全新原装现货、诚信经营! |
|||
FAIRCHILD |
21+ |
TO-247 |
6880 |
只做原装,质量保证 |
|||
ON/安森美 |
25+ |
TO-247 |
32360 |
ON/安森美全新特价NGTB40N120FL2WG即刻询购立享优惠#长期有货 |
|||
ON |
24+ |
TO247 |
90000 |
||||
ON(安森美) |
24+ |
TO-247 |
6197 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
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