Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK

文件：153.96 Kbytes Page：7 Pages

Ignition IGBT 20 A, 365 V, N−Channel D2PAK

Ignition IGBT 20 A, 365 V, N.Channel D2PAK

文件：125.9 Kbytes Page：7 Pages

Ignition IGBT 20 A, 365 V, N.Channel D2PAK

文件：125.9 Kbytes Page：7 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 365V 20A 165W D2PAK3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ignition IGBT 20 A, 365 V, N?묬hannel D2PAK

文件：153.96 Kbytes Page：7 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER

Gallium Arsenide CATV Amplifier Module

The RF Line Gallium Arsenide CATV Amplifier Module Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module Features • Specified for 79- and 112-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protecti

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

ATM Interconnect

Description The CelXpres T8207 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance