Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 6A , RDS(ON)=20mΩ @VGS=4.5V. RDS(ON)=30mΩ @VGS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

BIPOLAR LINEAR INTEGRATED CIRCUIT (LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER

Gallium Arsenide CATV Amplifier Module

The RF Line Gallium Arsenide CATV Amplifier Module Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module Features • Specified for 79- and 112-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protecti

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

ATM Interconnect

Description The CelXpres T8207 device integrates all of the required functionality to transport ATM cells across a backplane architecture with high-speed cell traffic exceeding 1.5 Gbits/s to a maximum of 32 destinations. The management of multiple service categories and monitoring of performance