型号 功能描述 生产厂家 企业 LOGO 操作
NGB8204N

Ignition IGBT 18 Amps, 400 Volts

文件:150.26 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NGB8204N

Ignition IGBT 18 Amps, 400 Volts

ONSEMI

安森美半导体

Ignition IGBT 18 Amps, 400 Volts

文件:127.77 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Ignition IGBT 18 Amps, 400 Volts

文件:150.26 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 430V 18A 115W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 430V 18A 115W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

Ignition IGBT 18 Amps, 400 Volts

文件:150.26 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Ignition IGBT 18 Amps, 400 Volts

文件:127.77 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

ACE

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

ACE

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

AITSEMI

创瑞科技

SC & FC/PC3 Pull-Proof Fiber Optic Connectors

文件:734.86 Kbytes Page:24 Pages

3M

4-Port DVI Broadcaster with Audio

文件:222.64 Kbytes Page:3 Pages

LVL1

NGB8204N产品属性

  • 类型

    描述

  • 型号

    NGB8204N

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Ignition IGBT 18 Amps, 400 Volts

更新时间:2025-11-4 11:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
ON/安森美
23+
TO-263
27750
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON
25+23+
TO263
72707
绝对原装正品现货,全新深圳原装进口现货
ON
24+
TO263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ON
6000
面议
19
D2PAK3LEAD
JINGDAO/晶导微
23+
SOD-123FL
69820
终端可以免费供样,支持BOM配单!
ON Semiconductor
23+
D2PAK
8000
只做原装现货
ON
TO263
16532
一级代理 原装正品假一罚十价格优势长期供货
ON/安森美
24+
NA/
66
优势代理渠道,原装正品,可全系列订货开增值税票
ON
25+
TO-263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证

NGB8204N数据表相关新闻