DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier

Product Features • 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz • Cascadable 50 ohm: 1.4:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier •

DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier

[Sirenza] Product Features • 11.7dB Gain, 18.9 dBm P1dB at 1950Mhz • Cascadable 50 ohm: 1.4:1 VSWR • Patented GaAs HBT Technology • Operates from Single Supply • Low Thermal Resistance Package • Unconditionally Stable Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Am

DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz.

Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance)

Silicon Tuning Diode Preliminary data • For VHF 2-Band-hyperband-TV-tuners • Very high capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to in-line matching assembly procedure

NPN 2 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range.

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 20 Volt VCEO * Gain of 400 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers

8-Bit CMOS ROM Based Microcontrollers with 8k Memory, CAN Interface, 8-Bit A/D, and USART

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Wideband, High Gain VOLTAGE LIMITING AMPLIFIER

文件：175.81 Kbytes Page：16 Pages