NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 20 Volt VCEO * Gain of 400 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC=2A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

封装/外壳：E-Line-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN, 20V, 3A, E-Line

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

文件：75.31 Kbytes Page：3 Pages

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN 20V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Fast Ethernet Cat5e Data Double-Ended Cordset

Product Description Fast Ethernet Cat5e Data Double-Ended Cordset: Male straight D-coded black M12 Standard to male straight RJ45-coded black RJ45 Field Attachable, shielded, 30 V AC / 42 V DC, 1.5 A; PUR green cable, 4-wires, 2x2x0.34 mm²

Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance)

Silicon Tuning Diode Preliminary data • For VHF 2-Band-hyperband-TV-tuners • Very high capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to in-line matching assembly procedure

Silicon Tuning Diode

Silicon Tuning Diode • For VHF TV tuners • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to in-line matching assembly procedure • Pb-free (RoHS compliant) package

NPN 2 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range.

Silicon Tuning Diode

文件：88.46 Kbytes Page：8 Pages