NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 20 Volt VCEO * Gain of 400 at IC=2 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 0.5V(Max) @IC=2A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

封装/外壳：E-Line-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN, 20V, 3A, E-Line

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

文件：75.31 Kbytes Page：3 Pages

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN 20V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance)

Silicon Tuning Diode Preliminary data • For VHF 2-Band-hyperband-TV-tuners • Very high capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to in-line matching assembly procedure

NPN 2 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range.

8-Bit CMOS ROM Based Microcontrollers with 8k Memory, CAN Interface, 8-Bit A/D, and USART

文件：835.81 Kbytes Page：75 Pages

Wideband, High Gain VOLTAGE LIMITING AMPLIFIER

文件：175.81 Kbytes Page：16 Pages