DC-6000 MHZ, CASCADABLE GAAS HBT MMIC AMPLIFIER

Product Description Sirenza Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunct

DC-6000 MHZ, CASCADABLE GAAS HBT MMIC AMPLIFIER

DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz.

Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance, High Temperature

FEATURES • Useful life: up to 2000 h at 125 °C • Very low ESR and high ripple current • Voltages up to 50 V • SMD-version with base plate, lead (Pb)-free reflow solderable • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance, High Temperature

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DUAL HIGH VOLTAGE/VERY HIGH CURRENT OPERATIONAL AMPLIFIER

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DUAL HIGH VOLTAGE/VERY HIGH CURRENT OPERATIONAL AMPLIFIER

文件：382.57 Kbytes Page：6 Pages