C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

X2 HDMI FACE PLATE

Features: • 2 HDMI connectors • 2 female connectors • 2 male connectors • Standard cable lengths 5m, 7m, 10m, 15m, 20m Description: Our single faceplate has two HDMI connectors. This standard faceplate comes with two female connectors on the front and two male connectors on the other end of

4.40-5.00 GHz 4-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.5 dBm Output Power at 1dB Compression • 11.5 dB Power Gain at 1dB Compression • 37 Power Added Efficiency • -46 dBc IM3 at PO = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

4.40-5.00 GHz 4-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.5 dBm Output Power at 1dB Compression • 11.5 dB Power Gain at 1dB Compression • 37 Power Added Efficiency • -46 dBc IM3 at PO = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

4.4-5.0 GHz Multi-Stage Power Amplifier

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C-Band Internally Matched FET

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