位置：首页 > IC中文资料第3013页 > NESG2030M04
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2030M04 | NONLINEAR MODEL DESCRIPTION The NESG2030M04 is fabricated using NECs state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA | NEC 瑞萨 |   | |
NESG2030M04 | NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：466.69 Kbytes Page：10 Pages | CEL California Eastern Labs | | |
NESG2030M04 | NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：151.94 Kbytes Page：9 Pages | NEC 瑞萨 | | |
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：466.69 Kbytes Page：10 Pages | CEL California Eastern Labs | | ||
包装：散装 描述：EVAL BOARD FOR NESG2030 1.6GHZ 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Labs | | ||
包装：盒 描述：EVAL BOARD FOR NESG2030 1.9GHZ 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Labs | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：151.94 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：466.69 Kbytes Page：10 Pages | CEL California Eastern Labs | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：466.69 Kbytes Page：10 Pages | CEL California Eastern Labs | |
NESG2030M04产品属性
- 类型
描述
- 型号
NESG2030M04
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
9920 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
24+ |
SOT343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
21+ |
SOT-343 |
10000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
25+ |
SOT343 |
18240 |
RENESAS/瑞萨原装特价NESG2030M04-T1-A即刻询购立享优惠#长期有货 |
|||
NEC |
23+ |
SOT-343 |
50000 |
原装正品 支持实单 |
|||
CEL |
24+ |
原厂原封 |
5000 |
原装正品 |
|||
NEC |
22+ |
SOT-343 |
25000 |
只做原装进口现货,专注配单 |
|||
CEL |
19+ |
SOT-343 |
200000 |
||||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
|||
- |
23+ |
SOT343 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
NESG2030M04规格书下载地址
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DdatasheetPDF页码索引
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