位置：首页 > IC中文资料第4000页 > NE7
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE7 | 包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件 | EssentraEssentra Components 益升华益升华科技股份有限公司 |  |   |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
GSM Repeater 71MHzSAWFilter AbsoluteMaximumRating RatingValue CWRFpowerDissipation+13dBm DCVoltagebetweenany2pins±30VDC OperatingTemperature-10to+60℃ | SIPATSIPAT Co,Ltd 胜普电子重庆胜普电子有限公司 |  | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GSM Repeater 71MHzSAWFilter AbsoluteMaximumRating RatingValue CWRFpowerDissipation+13dBm DCVoltagebetweenany2pins±30VDC OperatingTemperature-10to+60℃ | SIPATSIPAT Co,Ltd 胜普电子重庆胜普电子有限公司 | | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE Ku-K BAND GaAs MESFET LOWNOISEKu-KBANDGaAsMESFET | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
LOW NOISE L TO K-BAND GaAs MESFET DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE L TO K-BAND GaAs MESFET DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE L TO K-BAND GaAs MESFET DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOW NOISE L TO K-BAND GaAs MESFET DESCRIPTION TheNE71300featuresalownoisefigureandhighassociatedgainthroughK-bandbyemployingarecessed0.3microngateandtripleepitaxialtechnology.TheactiveareaofthechipiscoveredwithSi02andSi3N4forscratchprotectionaswellassurfacestability.Thisdeviceissui | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES Lownoisefigure NF=0.6dBTYP.atf=4GHz Highassociatedgain Ga=14dBTYP.atf=4GHz Gatewidth:Wg=280µm GateLength:Lg=0.3µm | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES xLownoisefigure NF=0.6dBTYP.atf=4GHz xHighassociatedgain Ga=14dBTYP.atf=4GHz xGatewidth:Wg=280Pm xGateLength:Lg=0.3Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET DESCRIPTION TheNE72118isahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistor(MESFET),housedinalowcostplasticsurfacemountpackage(SOT23style).ThisdeviceslowphasenoiseandhighfTmakeitanexcellentchoiceforoscillatorapplicationsonadigitalLNB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoXBANDAMPLIFIER CtoXBANDOSC N-CHANNELGaAsMESFET FEATURES •HighPowerGain:GS=5.5dBTYP.@f=12GHz •GateLength:Lg=0.8mm(recessedgate) •GateWidth:Wg=330mm •4pinssuperminimold •Tape&reelpackagingonlyavailable | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET DESCRIPTION TheNE72118isahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistor(MESFET),housedinalowcostplasticsurfacemountpackage(SOT23style).ThisdeviceslowphasenoiseandhighfTmakeitanexcellentchoiceforoscillatorapplicationsonadigitalLNB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoXBANDAMPLIFIER CtoXBANDOSC N-CHANNELGaAsMESFET FEATURES •HighPowerGain:GS=5.5dBTYP.@f=12GHz •GateLength:Lg=0.8mm(recessedgate) •GateWidth:Wg=330mm •4pinssuperminimold •Tape&reelpackagingonlyavailable | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET DESCRIPTION TheNE72118isahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistor(MESFET),housedinalowcostplasticsurfacemountpackage(SOT23style).ThisdeviceslowphasenoiseandhighfTmakeitanexcellentchoiceforoscillatorapplicationsonadigitalLNB | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoXBANDAMPLIFIER CtoXBANDOSC N-CHANNELGaAsMESFET FEATURES •HighPowerGain:GS=5.5dBTYP.@f=12GHz •GateLength:Lg=0.8mm(recessedgate) •GateWidth:Wg=330mm •4pinssuperminimold •Tape&reelpackagingonlyavailable | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GENERAL PURPOSE L TO X-BAND GaAs MESFET DESCRIPTION TheNE721S01isalowcost0.8µmrecessedgateGaAsMESFET,suitableforbothamplifierandoscillatorapplications.Largergategeometrymakethisdeviceidealforsecondandthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfrequencyrange.TheNE721S01isfabricatedw | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GENERAL PURPOSE L TO X-BAND GaAs MESFET DESCRIPTION TheNE721S01isalowcost0.8µmrecessedgateGaAsMESFET,suitableforbothamplifierandoscillatorapplications.Largergategeometrymakethisdeviceidealforsecondandthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfrequencyrange.TheNE721S01isfabricatedw | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GENERAL PURPOSE L TO X-BAND GaAs MESFET DESCRIPTION TheNE721S01isalowcost0.8µmrecessedgateGaAsMESFET,suitableforbothamplifierandoscillatorapplications.Largergategeometrymakethisdeviceidealforsecondandthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfrequencyrange.TheNE721S01isfabricatedw | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES •HighpowergaininCtoXband:GS=4.5dBTYP.@f=12GHz •Gatelength:Lg=0.8µm •Gatewidth:Wg=400µm •4-pinsuperminimoldpackage •Tape&reelpackagingonlyavailable | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES •HighpowergaininCtoXband:GS=4.5dBTYP.@f=12GHz •Gatelength:Lg=0.8µm •Gatewidth:Wg=400µm •4-pinsuperminimoldpackage •Tape&reelpackagingonlyavailable | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES •HighpowergaininCtoXband:GS=4.5dBTYP.@f=12GHz •Gatelength:Lg=0.8µm •Gatewidth:Wg=400µm •4-pinsuperminimoldpackage •Tape&reelpackagingonlyavailable | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON GENERAL PURPOSE TRANSISTOR DESCRIPTION TheNE734seriesofNPNsilicongeneralpurposeUHFtransistorsprovidethedesignerwithawideselectionofreliabletransistorsforhighspeedlogicandwide-bandlownoiseamplifierapplications.TheseriesusesNECshighlyreliableplatinum-silicide,titanium,platinum,andgold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON GENERAL PURPOSE TRANSISTOR DESCRIPTION TheNE734seriesofNPNsilicongeneralpurposeUHFtransistorsprovidethedesignerwithawideselectionofreliabletransistorsforhighspeedlogicandwide-bandlownoiseamplifierapplications.TheseriesusesNECshighlyreliableplatinum-silicide,titanium,platinum,andgold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON GENERAL PURPOSE TRANSISTOR DESCRIPTION TheNE734seriesofNPNsilicongeneralpurposeUHFtransistorsprovidethedesignerwithawideselectionofreliabletransistorsforhighspeedlogicandwide-bandlownoiseamplifierapplications.TheseriesusesNECshighlyreliableplatinum-silicide,titanium,platinum,andgold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN SILICON GENERAL PURPOSE TRANSISTOR DESCRIPTION TheNE734seriesofNPNsilicongeneralpurposeUHFtransistorsprovidethedesignerwithawideselectionofreliabletransistorsforhighspeedlogicandwide-bandlownoiseamplifierapplications.TheseriesusesNECshighlyreliableplatinum-silicide,titanium,platinum,andgold | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES ●HIGHGAINBANDWIDTHPRODUCT:fT=2.2GHz ●EXCELLENTINTERMODULATIONCHARACTERISTICSATHIGHOUTPUTLEVELS ●LOWNOISEFIGURE:3.5dBat200MHz ●EXCELLENTWIDEBANDCATVAMPLIFIER | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES ●HIGHGAINBANDWIDTHPRODUCT:fT=2.2GHz ●EXCELLENTINTERMODULATIONCHARACTERISTICSATHIGHOUTPUTLEVELS ●LOWNOISEFIGURE:3.5dBat200MHz ●EXCELLENTWIDEBANDCATVAMPLIFIER | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES ●HIGHGAINBANDWIDTHPRODUCT:fT=2.2GHz ●EXCELLENTINTERMODULATIONCHARACTERISTICSATHIGHOUTPUTLEVELS ●LOWNOISEFIGURE:3.5dBat200MHz ●EXCELLENTWIDEBANDCATVAMPLIFIER | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure NF=1.6dBTYP.atf=12GHz •Highassociatedgain Ga=9.0dBTYP.atf=12GHz •Gatelength:Lg=0.3Pm •Gatewidth:Wg=280Pm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET GENERALPURPOSEN-CHANNELGaAsMESFET DESCRIPTION NE76038isaN-channelGaAsMESFEThousedin plasticpackage.Thedeviceisfabricatedbyionimplantation forimprovedRFandDCperformancereliabilityanduniformity. Itsexcellentlownoiseandhighassociatedgainmake itsuitablefo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET GENERALPURPOSEN-CHANNELGaAsMESFET DESCRIPTION NE76038isaN-channelGaAsMESFEThousedin plasticpackage.Thedeviceisfabricatedbyionimplantation forimprovedRFandDCperformancereliabilityanduniformity. Itsexcellentlownoiseandhighassociatedgainmake itsuitablefo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET GENERALPURPOSEN-CHANNELGaAsMESFET DESCRIPTION NE76038isaN-channelGaAsMESFEThousedin plasticpackage.Thedeviceisfabricatedbyionimplantation forimprovedRFandDCperformancereliabilityanduniformity. Itsexcellentlownoiseandhighassociatedgainmake itsuitablefo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure NF=1.6dBTYP.atf=12GHz(NE76083A) NF=2.4dBMAX.atf=12GHz(NE76083A-2.4) •Highassociatedgain Ga=9.0dBTYP.atf=12GHz(NE76083A) Ga=9.0dBTYP.atf=12GHz(NE76083A-2.4) •Ga | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure&Highassociatedgain NF=1.6dBTYP.,Ga=9.0dBTYP.atf=12GHz •Gatelength:Lg=0.3mm •Gatewidth:Wg=280mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure&Highassociatedgain NF=1.6dBTYP.,Ga=9.0dBTYP.atf=12GHz •Gatelength:Lg=0.3mm •Gatewidth:Wg=280mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure&Highassociatedgain NF=1.6dBTYP.,Ga=9.0dBTYP.atf=12GHz •Gatelength:Lg=0.3mm •Gatewidth:Wg=280mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET CtoKuBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET FEATURES •Lownoisefigure&Highassociatedgain NF=1.6dBTYP.,Ga=9.0dBTYP.atf=12GHz •Gatelength:Lg=0.3mm •Gatewidth:Wg=280mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118isan-channelGaAsMESFEThousedinMOLDpackage. FEATURES •LownoisefigureNF=0.8dBTYP.atf=2GHz •HighassociatedgainGa=13.5dBTYP.atf=2GHz •Gatewidth:Wg=400Pm •4pinssuperminimold •Tape&reelpackagingonlyavailable | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAs MES FET LtoSBANDLOWNOISEAMPLIFIER N-CHANNELGaAsMESFET DESCRIPTION NE76118isan-channelGaAsMESFEThousedinMOLDpackage. FEATURES •Lownoisefigure NF=0.8dBTYP.atf=2GHz •Highassociatedgain Ga=13.5dBTYP.atf=2GHz •Gatewidth:Wg=400Pm •4pinssupermini | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE7产品属性
- 类型
描述
- 型号
NE7
- 功能描述
CLAMP VINYL-DIPPED 7/16X3/8
- RoHS
是
- 类别
线缆，导线 - 管理 >> 线夹和夹具
- 系列
NE
- 标准包装
100
- 系列
TC
- 类型
C-夹
- 开口尺寸
0.79 L x 0.54 W x 0.67 H（20.1mm x 13.7mm x 17.0mm）
- 安装类型
钉子
- 材质
聚丙烯
- 颜色
黑
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
SOT-343 |
6000 |
原装正品，支持实单 |
|||
NEC |
21+ |
N/A |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
DBLECTRO |
23+ |
原厂原包 |
29960 |
只做进口原装 终端工厂免费送样 |
|||
RENESAS/瑞萨 |
23+ |
NA/ |
4201 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
20+/21+ |
NA |
6000 |
全新原装价格优势 |
|||
NEC |
2020+ |
渡金十字架 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NEC |
22+ |
SOP4? |
5000 |
全新原装现货特价.. |
|||
PHI |
23+ |
SOP-8 |
1030 |
特价库存 |
|||
NEC |
十字架 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NE |
23+ |
SOP |
1000 |
大批量供应优势库存热卖 |
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- NE71083-07
- NE71083-06
- NE71083
- NE71-02
- NE71000
- NE71-0.2
- NE710
- NE-7
- NE699M01-T1
- NE699M01
- NE698M01-T1
- NE698M01
- NE6970-SM
- NE696M01-T1-A
- NE696M01-T1
- NE696M01-A
- NE696M01
- NE69039-T1-A
- NE69039-T1
- NE69039-A
- NE69039
- NE68939-T1-A
- NE68939-T1
- NE68939-A
- NE68939
- NE688M23
- NE688M13
- NE688M03-T1-A
- NE68819
- NE68800
- NE688
- NE68739
- NE68733
- NE68730
- NE68719
- NE68718
- NE68700
- NE687
- NE686
- NE68539
- NE68519
- NE68518
- NE685
- NE68337
- NE68139
- NE68135
NE7数据表相关新闻
NEO-F10T-00B
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2024-2-27NEO-F10N-00B
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2024-2-27NEMEME001
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2023-3-16NE5568-交换式电源控制器
描述该NE5568是一个使用的开关式电源控制电路供应。它包含一个内部温度补偿的供应，脉宽调制，锯齿振荡器，过电流检测锁存和输出阶段。该装置适用于低成本开关电源的应用场合广泛的看家功能不是必需的。是的NE5568作者：NE5561所选版本。特征•微小型（四）包•脉宽调制器•电流限制（按周期循环）•锯齿波发生器•稳压电源•双脉冲防护•内部温度补偿基准
2013-3-7NE57811-先进的DDR内存，关闭终端电源
描述NE57811目的是提供一个终止的权力双数据速率（DDR）SDRAM内存总线。它显着减少元件数量，电路板空间和整体系统成本比以前的解决方案。NE57811DDR终端稳压器维持输出RAM的电压（DDR参考总线电压）的一半，电源电压。它是能够提供高达±3.5一个持续时期。过流限制保护从浪涌NE57811启动电流和过热关断保护在极端温度情况下的设备。SPAK-5（SOT756）包热强大的灵活性散热设计。由于NE57811是一个线性稳压器，没有外部电感器或开关场效应管是必要的。响应速度快负载的变化，降低输出电容器的需求。特点
2013-1-14NE56631-30D-低有效的系统复位
NE56631-XX是一个家庭的低有效，上电复位内提供±3％及超精密的阈值电压检测低工作电源电流通常为1.5毫安。几种检测阈值电压可在1.9V，2.0V，为2.7V，2.8V，2.9V，3.0V，3.1V，4.2V，4.3V，4.4V，4.5V，4.6V。根据要求提供其它阈值从100mV的步长1.9V至4.6V。随着它的超低电源电流和高精密电压阈值NE56631-XX的检测能力，非常适合各种如复位逻辑电路和电池供电应用微处理器，电压检查和检测水平。应用•复位微处理器和逻辑电路•电压
2012-11-18
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