Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

High Voltage, Latch-Up Proof

GENERAL DESCRIPTION The ADG5208/ADG5209 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG5208 switches one of eight inputs to a common output, as determined by the 3-bit binary address lines, A0, A1, and A2. The ADG5209

High Voltage, Latch-Up Proof

GENERAL DESCRIPTION The ADG5208/ADG5209 are monolithic CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG5208 switches one of eight inputs to a common output, as determined by the 3-bit binary address lines, A0, A1, and A2. The ADG5209

AA & 9V BATTERY CONTACT

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Fault Protection, ??.4 pC QINJ, 8:1/Dual 4:1 Multiplexers

文件：544.93 Kbytes Page：27 Pages

Fault Protection, ??.4 pC QINJ, 8:1/Dual 4:1 Multiplexers

文件：544.93 Kbytes Page：27 Pages