位置：首页 > IC中文资料第974页 > NE42484A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE42484A | HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE | RENESAS 瑞萨 |   | |
NE42484A | NONLINEAR MODEL 文件：72.34 Kbytes Page：2 Pages | NEC 瑞萨 | | |
NE42484A | NONLINEAR MODEL | RENESAS 瑞萨 | | |
丝印代码：M；HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE | RENESAS 瑞萨 | | ||
丝印代码：M；HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE | RENESAS 瑞萨 | | ||
丝印代码：M；HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE | RENESAS 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FE | RENESAS 瑞萨 | | ||
NONLINEAR MODEL 文件：72.34 Kbytes Page：2 Pages | NEC 瑞萨 | |
NE42484A产品属性
- 类型
描述
- 型号
NE42484A
- 功能描述
MOSFET REORD 551-NE334S01
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+ |
SMD |
30000 |
代理全新原装现货,价格优势 |
|||
NEC |
26+ |
TO-5 |
8293 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS |
22+ |
SM-86 |
3000 |
原装正品,支持实单 |
|||
NEC |
2450+ |
SMD |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
NEC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
24+ |
500 |
真实现货库存 |
|||||
NEC |
24+ |
SMD |
5000 |
全新原装正品,现货销售 |
|||
NEC |
17+ |
6200 |
100%原装正品现货 |
||||
NEC |
24+ |
SOP16 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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NE42484A规格书下载地址
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DdatasheetPDF页码索引
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