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参考价格：￥1.5480
型号：NE4 品牌：RICHCO 备注：这里有NE4多少钱，2024年最近7天走势，今日出价，今日竞价，NE4批发/采购报价，NE4行情走势销售排行榜，NE4报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE4 | 包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件 | EssentraEssentra Components 益升华益升华科技股份有限公司 |  |   |
NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTIONANDAPPLICATIONS TheNE416seriesofNPNsilicontransistorsisoneofthemostversatileandwidelyusedonNECsmicrowavetransistors.Theseriesprovideseconomicalsolutionstoawiderangeofamplifierandoscillatorproblems.Lownoisefigures,highgainandhighcurrentcapabili | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown | CEL California Eastern Laboratories |  | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown | CEL California Eastern Laboratories | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPER LOW NOISE HJ FET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown | CEL California Eastern Laboratories | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES •Superlownoisefigure&associatedgain: NF=0.75TYP.,Ga=12dBTYP.@f=12GHz NF=0.4TYP.,Ga=16dBTYP.@f=4GHz •6-pinsuperminimoldpackage •Gatewidth:Wg=160mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR FEATURES •Superlownoisefigure&associatedgain: NF=0.75TYP.,Ga=12dBTYP.@f=12GHz NF=0.4TYP.,Ga=16dBTYP.@f=4GHz •6-pinsuperminimoldpackage •Gatewidth:Wg=160mm | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484CisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484CisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484CisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET DESCRIPTION TheNE42484CisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHetero-JunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandothercommercialapplications. NECsstringentqualityassuranceandtestproceduresassurethehigh | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHetero-JunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandothercommercialapplications. NECsstringentqualityassuranceandtestproceduresassurethehigh | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE425S01isaHetero-JunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandothercommercialapplications. NECsstringentqualityassuranceandtestproceduresassurethehigh | CEL California Eastern Laboratories | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR CtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •Superlownoisefigure&Highassociatedgain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforsecondandthirdstagelownoiseamplifiersinDBS,TVROandothercommercialsystems. NECsstringentquali | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBS,TVROandanothercommercialsystems. FEATURES •Superlownoisefigure&Highassociatedgain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE429M01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforsecondandthirdstagelownoiseamplifiersinDBS,TVROandothercommercialsystems. NECsstringentquali | CEL California Eastern Laboratories | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.3 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE HJ FET DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISEFIGURE: | CEL California Eastern Laboratories | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.3 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE HJ FET DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISEFIGURE: | CEL California Eastern Laboratories | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.3 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE HJ FET DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISEFIGURE: | CEL California Eastern Laboratories | | | |
Dual general-purpose operational amplifier DESCRIPTION The4558isadualoperationalamplifierthatisinternallycompensated.Excellentchannelseparationallowstheuseofadualdeviceinasingleampapplication,providingthehighestpackagingdensity.TheNE/SA/SE4558isapin-for-pinreplacementfortheRC/RM/RV4558. FEATURE | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
Dual general-purpose operational amplifier DESCRIPTION The4558isadualoperationalamplifierthatisinternallycompensated.Excellentchannelseparationallowstheuseofadualdeviceinasingleampapplication,providingthehighestpackagingdensity.TheNE/SA/SE4558isapin-for-pinreplacementfortheRC/RM/RV4558. FEATURE | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Dual general-purpose operational amplifier DESCRIPTION The4558isadualoperationalamplifierthatisinternallycompensated.Excellentchannelseparationallowstheuseofadualdeviceinasingleampapplication,providingthehighestpackagingdensity.TheNE/SA/SE4558isapin-for-pinreplacementfortheRC/RM/RV4558. FEATURE | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION NECsNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesoffers | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION TheNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesofferse | CEL California Eastern Laboratories | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION NECsNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesoffers | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION TheNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesofferse | CEL California Eastern Laboratories | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION NECsNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesoffers | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR DESCRIPTION TheNE461seriesofNPNsiliconepitaxialbipolartransistorsisdesignedformediumpowerapplicationsrequiringhighdynamicrange.Thisdeviceexhibitsanoutstandingcombinationofhighgainandlowintermodulationdistortion,aswellaslownoisefigure.TheNE461seriesofferse | CEL California Eastern Laboratories | | | |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION TheNE461M02isanNPNsiliconepitaxialbipolartransistordesignedformediumpowerapplicationsrequiringhighdynamicrangeandlowintermodulationdistortion.ThisdeviceoffersexcellentperformanceandreliabilityatlowcostthroughNECstitanium,platinum,goldmetallization | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION TheNE461M02isanNPNsiliconepitaxialbipolartransistordesignedformediumpowerapplicationsrequiringhighdynamicrangeandlowintermodulationdistortion.ThisdeviceoffersexcellentperformanceandreliabilityatlowcostthroughNECstitanium,platinum,goldmetallization | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION TheNE46234/2SC4703isdesignedforlowdistortion,lownoiseRFamplifieroperatingwithlowsupplyvoltage(VCE=5V).ThislowdistortioncharacteristicmakesitsuitableforCATV,tele-communicationandotheruse.Itemployssurfacemounttypeplasticpackage,powerminimold( | CEL California Eastern Laboratories | | | |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION TheNE46234/2SC4703isdesignedforlowdistortion,lownoiseRFamplifieroperatingwithlowsupplyvoltage(VCE=5V).ThislowdistortioncharacteristicmakesitsuitableforCATV,tele-communicationandotheruse.Itemployssurfacemounttypeplasticpackage,powerminimold( | CEL California Eastern Laboratories | | | |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION TheNE46234/2SC4703isdesignedforlowdistortion,lownoiseRFamplifieroperatingwithlowsupplyvoltage(VCE=5V).ThislowdistortioncharacteristicmakesitsuitableforCATV,tele-communicationandotheruse.Itemployssurfacemounttypeplasticpackage,powerminimold( | CEL California Eastern Laboratories | | | |
N-CHANNEL GAASDUAL-GATE MESFET 文件：208.45 Kbytes Page：2 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HJ-FET 13DB S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Laboratories | | | |
NONLINEAR MODEL 文件：72.34 Kbytes Page：2 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE4产品属性
- 类型
描述
- 型号
NE4
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
N-CHANNEL GAASDUAL-GATE MESFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC/RENESAS瑞萨 |
23+ |
SOT-89 |
89630 |
当天发货全新原装现货 |
|||
NEC |
21+ |
SMT86 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
|||
Essentra |
22+ |
NA |
3597 |
加我QQ或微信咨询更多详细信息, |
|||
Signeti |
21+ |
SOP |
12588 |
原装正品,自己库存 假一罚十 |
|||
NEC |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
PHILIPS |
23+ |
SO-8 |
12300 |
||||
PHIL |
1998 |
44 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
||||
RENESAS(瑞萨)/IDT |
20+ |
SMD |
4000 |
||||
NEC |
21+ |
6688 |
十年老店,原装正品 |
||||
PHI |
23+ |
NA |
285 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
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- NE4558
- NE-45
- NE45
- NE416
- NE41137
- NE-4
- NE3X1WH6
- NE-38H
- NE38018-T1
- NE38018
- NE3520S03-A
- NE3517S03-T1C-A
- NE3515S02-T1C-A
- NE3515S02-A
- NE3514S02-A
- NE3512S02-T1C-A
- NE3512S02-A
- NE3511S02-T1C-A
- NE3511S02-A
- NE3510M04-T2-A
- NE3510M04-A
- NE3509M04-T2-A
- NE3509M04-A
- NE3508M04-A
- NE3503M04-A
- NE34018
- NE33284
- NE33200
- NE32900
- NE32584
- NE32500
- NE32400
- NE32084
- NE32000
- NE-30
- NE3
- NE27200
- NE25339
- NE25337
- NE25139
- NE25137
- NE25118
- NE24200
- NE23383
- NE23300
- NE230
NE4数据表相关新闻
NE5532ADR
NE5532ADR
2023-4-14NE5532DRG4 TI/德州仪器 21+ SOP8
https://hfx03.114ic.com/
2022-2-19NE5532DR原装热卖库存
型号：NE5532DR 制造商 TexasInstruments 制造商零件编号 NE5532DR 描述 ICOPAMPGP2CIRCUIT8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级（MSL）1（无限） 详细描述通用-放大
2021-12-6NE3512S02-T1DNE3512S02-T1C
NE3512S02-T1C，全新原装当天发货或门市自取0755-82732291.NE3512S02-T1D
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
DdatasheetPDF页码索引
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