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型号：NE3 品牌：RICHCO 备注：这里有NE3多少钱，2024年最近7天走势，今日出价，今日竞价，NE3批发/采购报价，NE3行情走势销售排行榜，NE3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3 | CABLE CLAMPS, PLASTISOL DIPPED 文件：39.06 Kbytes Page：1 Pages | RICHCORICHCO component 益升华益升华贸易(宁波)有限公司 |  |   |
NE3 | 包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件 | EssentraEssentra Components 益升华益升华科技股份有限公司 |  | |
Near edge thermal printhead (300 dots / inch) TheNE3004-VA10Aisanearedgethin-filmthermalprintheadwheretheprintingmediumpassesstraightthrough.Thisprintheadiscapableofprintingspeedsupto8inch/secondandissuitedforlabelprinters. Features 1)Inclinedtowardtheprintingsurfacetoprovideexcellentprintingquali | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialandspaceapplications. FEATURES •SuperLowNoiseFigure&Hi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION NECsNE321000isaHetero-JunctionFETchipthatutilizesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighelectronmobility.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercial,industrialandspaceapplications. NECsstringe | CEL California Eastern Laboratories |  | | |
HETERO JUNCTION FIELDEFFECT TRANSISTOR DESCRIPTION TheNE321000isHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems,industrialand spaceapplications. FEATURES •SuperLowNoiseFigure&High | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET DESCRIPTION TheNE32484AisapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themush | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32484AisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS, TVROandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500andNE27200areHeteroJunctionFETchipthatutilizestheheterojunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighmobilityelectrons.Itsexcellentlownoiseandhighassociatedgainmakeitsuitableforcommercialsystems,industrialandspaceapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP DESCRIPTION NECsNE32500isaHetero-JunctionFETchipthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstrin | CEL California Eastern Laboratories | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION NE32500andNE27200areHeteroJunctionFETchipthatutilizestheheterojunctionbetweenSi-dopedAlGaAs andundopedInGaAstocreatehighmobilityelectrons.Itsexcellentlownoiseandhighassociatedgainmakeitsuitable forcommercialsystems,industrialandspaceapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP DESCRIPTION NECsNE32500isaHetero-JunctionFETchipthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstrin | CEL California Eastern Laboratories | | | |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP DESCRIPTION NECsNE32500isaHetero-JunctionFETchipthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstrin | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent | CEL California Eastern Laboratories | | | |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE325S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.Itsexcellentlownoisefigureandhighassociatedgainmakeitsuitableforcommercialsystemsandindustrialapplications. NECsstringent | CEL California Eastern Laboratories | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION NE32900isHeteroJunctionFETchipthatutilizestheheterojunctionbetweenSi-dopedAlGaAsandundoped InGaAstocreatehighmobilityelectrons.Itsexcellentlownoiseandhighassociatedgainmakeitsuitablefor commercialsystems,industrialandspaceapplications. FEATURES | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32984DisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS andanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.40 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32984DisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS andanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.40 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32984DisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS andanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.40 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION TheNE32984DisaHeteroJunctionFETthatutilizesthe heterojunctiontocreatehighmobilityelectrons.Itsexcellent lownoiseandhighassociatedgainmakeitsuitableforDBS andanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.40 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR XtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR XtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR XtoKuBANDSUPERLOWNOISEAMPLIFIER N-CHANNELHJ-FET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE33284AisaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandlingcapabilities.Themushroomgatealso | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE334S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE334S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION TheNE334S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES •VERYLOWNOISE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018isan-channelHJ-FEThousedinMOLDpackage. FEATURES •Lownoisefigure NF=0.6dBTYP.atf=2GHz •Highassociatedgain Ga=16dBTYP.atf=2GHz •Gatewidth:Wg=400μm •4pinssuperminimold •Tape&reelpackagingonlyavailable | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE3产品属性
- 类型
描述
- 型号
NE3
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
Near edge thermal Printhead
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SMT84 |
89630 |
当天发货全新原装现货 |
|||
NEC |
23+ |
SMT86 |
65480 |
||||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
NEC |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
NEC |
21+ |
十字架 |
100000 |
原厂订货价格优势,可开13%的增值税票 |
|||
Particle |
2010+ |
N/A |
66 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
Essentra |
22+ |
NA |
9692 |
加我QQ或微信咨询更多详细信息, |
|||
NEC |
21+ |
42664 |
12588 |
原装正品假一罚十 |
|||
Renesas |
21+ |
SMT86 |
10080 |
公司只做原装,诚信经营 |
|||
RENESAS |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
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- NE3515S02-A
- NE3514S02-A
- NE3512S02-T1C-A
- NE3512S02-A
- NE3511S02-T1C-A
- NE3511S02-A
- NE3510M04-T2-A
- NE3510M04-A
- NE3509M04-T2-A
- NE3509M04-A
- NE3508M04-A
- NE3503M04-A
- NE34018
- NE33284
- NE33200
- NE32900
- NE32584
- NE32500
- NE32400
- NE32084
- NE32000
- NE-30
- NE-2D
- NE-2A
- NE27200
- NE2537-06-ROHS
- NE25339
- NE25337
- NE2515-06-ROHS
- NE25139
- NE25137
- NE25118
- NE2437-06-ROHS
- NE24200
- NE23383
- NE2337-06-ROHS
- NE23300
- NE230
- NE-23
- NE22120
- NE22100
- NE21987
- NE21937
- NE21935
- NE21912
- NE21908
- NE21903
- NE219
- NE21889
- NE213042AX01
- NE213012AX01
- NE210021AX01
- NE18CTII2AEESNP4AMP
- NE18CTII2AEE4AMP
- NE1855EE
- NE1848EE
- NE1845EE
- NE1839EE
- NE1838EE01
- NE182UEESNP6AMP
- NE182UEESN6AMP
- NE182UEEP6AMP
NE3数据表相关新闻
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512
NE3512，全新原装当天发货或门市自取0755-82732291，
2019-3-22NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
DdatasheetPDF页码索引
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