P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

P 沟道增强型场效应晶体管 -30V，-5A，65mΩ

功率SOT N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件特别适用于笔记本电脑功率管理和DC电机控制等低电压应用。 •-5A，-30V。 RDS(ON) = 0.065 RDS(ON) = 0.3 Ω @ VGS = -10VRDS(ON) = 0.1 RDS(ON) = 0.3 Ω @ VGS = -4.5V\n•高密度设计可实现极低的RDS(ON)。\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装。;

P-Channel 35 V (D-S) MOSFET

文件：1.7476 Mbytes Page：8 Pages

5-Pin Mini Flat Package High Speed Transistor Optocoupler

Description The FODM452 and FODM453 optocouplers consist of an AlGaAs LED optically coupled to a high speed photo−detector transistor. The devices are housed in a compact 5−pin mini flat package for optimum mounting density. The FODM453 features a high CMR rating for optimum common mode tran

Silicon N-Channel JFET Transistor VHF Amplifier, Mixer

Description: The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers.

Single Supply, Low-Power, High Output, Current Feedback Amplifier

文件：191.15 Kbytes Page：12 Pages

Single Supply, Low-Power, High Output, Current Feedback Amplifier

文件：191.15 Kbytes Page：12 Pages

Square Type

文件：32 Kbytes Page：1 Pages