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NDT价格
参考价格:¥1.0230
型号:NDT014 品牌:Fairchild 备注:这里有NDT多少钱,2025年最近7天走势,今日出价,今日竞价,NDT批发/采购报价,NDT行情走势销售排行榜,NDT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NDT | Isolated 3W Wide Input Dual Output DC-DC Converters DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range | CANDD | ||
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range | CANDD | |||
Isolated 3W Wide Input Dual Output DC-DC Converters DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range | CANDD | |||
P-Channel Enhancement Mode Field Effect Transistor General Description This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications. Applications • DC/DC converter • Power management | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
60V N-Channel General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly | EVVOSEMI 翊欧 | |||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package. | TECHPUBLIC 台舟电子 | |||
60V N-Channel General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly | EVVOSEMI 翊欧 | |||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching perf | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range | CANDD | |||
Isolated 3W Wide Input Dual Output DC-DC Converters DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range | CANDD | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS [CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS [CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Isolated 3W Wide Input Dual Output DC-DC Converters Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS [CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS [CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
Isolated 3W Single Output DC-DC Converters Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated | MURATA-PSMurata Power Solutions Inc. 村田村田制作所 | |||
LM120/LM320-N Series 3-Terminal Negative Regulators 文件:1.50816 Mbytes Page:22 Pages | TI 德州仪器 | |||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件:411.98 Kbytes Page:10 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 600 V, 8.5 文件:136.15 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 600 V, 8.5 ohm 文件:136.15 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 600 V, 8.5 ohm 文件:136.15 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:108.03 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:108.03 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:110.29 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:110.29 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:110.29 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Specifications 文件:241.16 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
N-Channel Power MOSFET 文件:128.43 Kbytes Page:9 Pages | ONSEMI 安森美半导体 | |||
N-Channel MOSFET 文件:1.9887 Mbytes Page:5 Pages | KEXIN 科信电子 | |||
N-Channel MOSFET 文件:1.49366 Mbytes Page:5 Pages | KEXIN 科信电子 | |||
N-Channel MOSFET 文件:1.93729 Mbytes Page:4 Pages | KEXIN 科信电子 | |||
Product Change Notification 文件:2.81601 Mbytes Page:221 Pages | Microchip 微芯科技 | |||
Product Change Notification 文件:2.81601 Mbytes Page:221 Pages | Microchip 微芯科技 | |||
P-Channel MOSFET 文件:1.025099 Mbytes Page:3 Pages | KEXIN 科信电子 |
NDT产品属性
- 类型
描述
- 型号
NDT
- 制造商
CANDD
- 制造商全称
C&D Technologies
- 功能描述
Isolated 3W Wide Input Dual Output DC-DC Converters
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Fairchild(飞兆/仙童) |
24+ |
N/A |
9748 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ON |
SOT-223 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
onsemi(安森美) |
24+ |
TO-3P |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
|||
UMW 友台 |
23+ |
?SOT-223 |
55000 |
原装正品,实单请联系 |
|||
ONSEMI |
18+ROHS |
NA |
6000 |
全新原装!优势库存热卖中! |
|||
MURATA/村田 |
25+ |
全新-电源模块 |
10238 |
MURATA/村田电源模块NDTD4815C交期短价格好#即刻询购立享优惠#长期有排单订 |
|||
FSC |
2024+ |
SOT-223 |
22700 |
绝对全新原装,现货热卖 |
|||
ON(安森美) |
24+ |
SOT-223-4 |
16860 |
原装正品现货支持实单 |
|||
ON(安森美) |
25+ |
SOT-223-4 |
3000 |
全新、原装 |
NDT规格书下载地址
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2020-4-8
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