NDT价格

参考价格:¥1.0230

型号:NDT014 品牌:Fairchild 备注:这里有NDT多少钱,2025年最近7天走势,今日出价,今日竞价,NDT批发/采购报价,NDT行情走势销售排行榜,NDT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NDT

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

CANDD

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

CANDD

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

CANDD

P-Channel Enhancement Mode Field Effect Transistor

General Description This 60V P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications. Applications • DC/DC converter • Power management

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

EVVOSEMI

翊欧

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

TECHPUBLIC

台舟电子

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

EVVOSEMI

翊欧

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching perf

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

CANDD

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the full operating range

CANDD

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS

[CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu

ETCList of Unclassifed Manufacturers

未分类制造商

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS

[CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu

ETCList of Unclassifed Manufacturers

未分类制造商

Isolated 3W Wide Input Dual Output DC-DC Converters

Industry standard footprint 2:1 input range, 3W output power, minimum 3:1 input range with power derating to 2W Dual isolated output Short circuit protection Operating temperature range -40ºC to 85ºC Load and line regulation

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS

[CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu

ETCList of Unclassifed Manufacturers

未分类制造商

ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS

[CD-Technologies] DESCRIPTION The NDT series is a range of low profile DCDC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85°C without heatsinking. A flyback oscillator design with isolated feedback is used to give regulation over the fu

ETCList of Unclassifed Manufacturers

未分类制造商

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

Isolated 3W Single Output DC-DC Converters

Industry standard footprint Single isolated output Short circuit protection Operating temperature range –40°C to +85°C Low profile 24 pin case 2:1 wide input range 1kVDC isolation ‘Hi Pot Test’ 5V, 12V & 24V inputs 5V & 12V outputs Internal SMD construction Fully encapsulated

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

LM120/LM320-N Series 3-Terminal Negative Regulators

文件:1.50816 Mbytes Page:22 Pages

TI

德州仪器

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件:411.98 Kbytes Page:10 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 600 V, 8.5

文件:136.15 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 600 V, 8.5 ohm

文件:136.15 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 600 V, 8.5 ohm

文件:136.15 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件:108.03 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件:108.03 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件:110.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件:110.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件:110.29 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Specifications

文件:241.16 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

N-Channel Power MOSFET

文件:128.43 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel MOSFET

文件:1.9887 Mbytes Page:5 Pages

KEXIN

科信电子

N-Channel MOSFET

文件:1.49366 Mbytes Page:5 Pages

KEXIN

科信电子

N-Channel MOSFET

文件:1.93729 Mbytes Page:4 Pages

KEXIN

科信电子

Product Change Notification

文件:2.81601 Mbytes Page:221 Pages

Microchip

微芯科技

Product Change Notification

文件:2.81601 Mbytes Page:221 Pages

Microchip

微芯科技

P-Channel MOSFET

文件:1.025099 Mbytes Page:3 Pages

KEXIN

科信电子

NDT产品属性

  • 类型

    描述

  • 型号

    NDT

  • 制造商

    CANDD

  • 制造商全称

    C&D Technologies

  • 功能描述

    Isolated 3W Wide Input Dual Output DC-DC Converters

更新时间:2025-8-12 9:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Fairchild(飞兆/仙童)
24+
N/A
9748
原厂可订货,技术支持,直接渠道。可签保供合同
ON(安森美)
23+
25900
新到现货,只有原装
ON
SOT-223
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
onsemi(安森美)
24+
TO-3P
7814
支持大陆交货,美金交易。原装现货库存。
UMW 友台
23+
?SOT-223
55000
原装正品,实单请联系
ONSEMI
18+ROHS
NA
6000
全新原装!优势库存热卖中!
MURATA/村田
25+
全新-电源模块
10238
MURATA/村田电源模块NDTD4815C交期短价格好#即刻询购立享优惠#长期有排单订
FSC
2024+
SOT-223
22700
绝对全新原装,现货热卖
ON(安森美)
24+
SOT-223-4
16860
原装正品现货支持实单
ON(安森美)
25+
SOT-223-4
3000
全新、原装

NDT数据表相关新闻