型号 功能描述 生产厂家 企业 LOGO 操作
NDP610BE

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

NDP610BE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

NTE

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

POWEREX

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

POWEREX

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

STMICROELECTRONICS

意法半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

NEC

瑞萨

NDP610BE产品属性

  • 类型

    描述

  • 型号

    NDP610BE

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-3-14 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
24+
TO220
5000
全新原装正品,现货销售
VBsemi
24+
TO220
8000
新到现货,只做全新原装正品
KA
23+
TO
25641
原厂授权一级代理,专业海外优势订货,价格优势、品种
FSC
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
FAIRCHILD/仙童
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TECCOR/LITT
23+
TO-218
69820
终端可以免费供样,支持BOM配单!
FSC
17+
TO-220
8820
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Fairchild/ON
22+
TO2203
9000
原厂渠道,现货配单
ON
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
VB
25+
TO-220AB
10000
原装现货假一罚十

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