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型号 功能描述 生产厂家 企业 LOGO 操作
NDP610BE

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

FAIRCHILD

仙童半导体

NDP610BE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

NTE

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

POWEREX

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

POWEREX

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

STMICROELECTRONICS

意法半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

NEC

瑞萨

NDP610BE产品属性

  • 类型

    描述

  • 型号

    NDP610BE

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-8-1 11:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
25000
原装正品 欢迎垂询
DIP
2450+
DIP
6540
只做原厂原装现货或订货假一赔十!
PANASONIC
2025+
TO220
4835
全新原厂原装产品、公司现货销售
MAKOSEMI
23+
SOT-23
25640
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
D2-pak
69820
终端可以免费供样,支持BOM配单!
FSC
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
NDP(芯潭微)
2613+
SOP-8
4000
原装认证库存-更多数量可原厂发货
VB
25+
TO-220
10000
原装现货假一罚十
O
TO-220
22+
6000
十年配单,只做原装
NCE/新洁能
两年内
原厂封装
100000
全新、原装现货

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