N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

SWITCHING DIODE

Switching Diode

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications