N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

SINGLE POLE, DOUBLE THROW CONNECTORIZED SWITCHES WITH DIGITAL CONNECTORS

文件：40.21 Kbytes Page：1 Pages

Line Switch, fits to Felcom

文件：288.78 Kbytes Page：2 Pages

Line Switch, fits to Felcom

文件：160.17 Kbytes Page：2 Pages

Line Switch, fits to Felcom

文件：188.07 Kbytes Page：3 Pages

Kompakte I/O-Module

文件：120.95 Kbytes Page：1 Pages