N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET N-CH 60V 15A TO-220

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

MOSFET N-CH 60V 15A TO-220

14-Stage, 12-Stage Ripple Carry Binary Counters

文件：136.27 Kbytes Page：6 Pages

14-Stage, 12-Stage Ripple Carry Binary Counters

文件：136.27 Kbytes Page：6 Pages

14-Stage, 12-Stage Ripple Carry Binary Counters

文件：136.27 Kbytes Page：6 Pages

14-Stage, 12-Stage Ripple Carry Binary Counters

文件：136.27 Kbytes Page：6 Pages

14-Stage, 12-Stage Ripple Carry Binary Counters

文件：136.27 Kbytes Page：6 Pages