InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

LASER DIODE

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

MULTILAYER CERAMIC CHIP CAPACITORS

Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency characteristics allow for a circuit de

Signal processing circuit for 2-D PSD

Signal processing circuit for 2-D PSD Signal processing circuit designed to facilitate operation of 2-D Position Sensitive Detector Features ● No complicated adjustment required Position measurement can be made simply by mounting 2-D PSD. ● Output voltage directly representing the posi

DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT

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DUAL 16-/14-/12-BIT, ULTRALOW-GLITCH, LOW-POWER, BUFFERED, VOLTAGE-OUTPUT DAC WITH 2.5-V, 4-PPM/째C INTERNAL REFERENCE IN SMALL 3-MM 횞 3-MM SON

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