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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NDL5531 | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |   | |
NDL5531 | 1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5531 | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | |
NDL5531 | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5531 | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION\nNDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm.FEATURES\n• Small dark current ID = 5 nA\n• Small terminal capacitanc • Small dark current ID = 5 nA\n• Small terminal capacitance Ct = 0.35 pF @ 0.9 V(BR)R\n• High quantum efficiency η = 90 % @ λ = 1 300 nm, M = 1\n η = 77 % @ λ = 1 550 nm, M = 1\n• High speed response fC = 2.5 GHz @ M = 10\n• Detecting area size φ30 µm\n•; | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
PHOTO DIODE 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS f30 mm InGaAs AVALANCHE PHOTO DIODE MODULE | RENESAS 瑞萨 | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | | ||
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE 文件：47.22 Kbytes Page：5 Pages | CEL | |
NDL5531产品属性
- 类型
描述
- 型号
NDL5531
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE
NDL5531规格书下载地址
NDL5531参数引脚图相关
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