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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NDL5506P | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 |   | |
NDL5506P | 1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5506P | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5506P | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5506P | 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | |
NDL5506P | PHOTO DIODE f 50 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC | RENESAS 瑞萨 | | |
PHOTO DIODE f 50 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC | RENESAS 瑞萨 | | ||
PHOTO DIODE f 50 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC | RENESAS 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci | NEC 瑞萨 | | ||
1 300 nm OPTICAL ANALOG CATV SYSTEM 80 mm InGaAs PIN PHOTO DIODE MODULE WITH SMF SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
PHOTO DIODE f 50 mm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC | RENESAS 瑞萨 | | ||
High Current RF Chokes Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Security & Sound, #22-8c BC, Shielded, CMR Product Description Security & Sound Cable, Riser-CMR, 8-22 AWG stranded bare copper conductors with polypropylene insulation, Beldfoil® shield and PVC jacket with ripcord | BELDEN 百通 | | ||
nOOds - Flexible LED Filament - 3V 300mm long - Red 文件：122.46 Kbytes Page：1 Pages | Adafruit | | ||
Wire Wound Chip Inductors 文件：391.78 Kbytes Page：3 Pages | SUMIDA 胜美达 | | ||
J5800-001 INSERTION TOOL PRODUCT SPECIFICATION 文件：23.08 Kbytes Page：1 Pages | Molex 莫仕 | |
NDL5506P产品属性
- 类型
描述
- 型号
NDL5506P
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3261 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
23+ |
NA |
392 |
专做原装正品,假一罚百! |
|||
NEC |
25+23+ |
New |
33686 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
22+ |
S |
3000 |
原装正品,支持实单 |
|||
NEC |
25+ |
SOP-8 |
18000 |
原厂直接发货进口原装 |
|||
NECELECTRONI |
6000 |
面议 |
19 |
DIP/SMD |
|||
24+ |
3000 |
公司存货 |
|||||
原厂正品 |
23+ |
DIP16 |
5000 |
原装正品,假一罚十 |
|||
NEC |
00+ |
光纤头传输 |
40 |
原装现货海量库存欢迎咨询 |
|||
NEC |
1923+ |
原厂封装 |
3000 |
绝对进口原装现货 |
NDL5506P芯片相关品牌
NDL5506P规格书下载地址
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