N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

N-Channel Enhancement Mode Field Effect Transistor

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW

DESCRIPTION The TS831 is an ultra low power integrated circuit incorporating a high stability band-gap voltage reference and a comparator with an open drain output. ■ ULTRA LOW POWER CONSUMPTION : 12µA maximum ■ PRECISION RESET THRESHOLD ■ THRESHOLD VOLTAGE: 4.33V typ. FOR TS831-5

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

LM831 Low Voltage Audio Power Amplifier

文件：309.36 Kbytes Page：14 Pages

LM831 Low Voltage Audio Power Amplifier

文件：309.36 Kbytes Page：14 Pages

LM831 Low Voltage Audio Power Amplifier

文件：309.36 Kbytes Page：14 Pages