General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V

RDS(ON) = 0.04Ω @ VGS = 2.7V.

■ High density cell design for extremely low RDS(ON).

■ Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability.