N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR

DESCRIPTION The TK651xx low power step-up DC-DC converter is designed for portable battery powered systems, capable of operating from a single battery cell down to 0.9 V. The TK651xx provides the power switch and the control circuit for a boost converter. The converter takes a DC input and boosts

DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER

Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8

DUAL NPN MEDIUM POWER TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER TRANSISTORS

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt