N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

LED SPACER MOUNTS

UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-13/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps, resistors, transis

LED SPACER MOUNTS

[KEYSTONE] “UNIVERSAL” FOR T-1 & T-1 3/4 • Unique design separates leads and retains Tri-Lead and Bi-Lead components. • Designed for PC board mounting of Tri-Lead and Bi-Lead T-1 and T-1 3/4 LEDS • Provides height control, lead retention and stability. • Also suitable for mounting lamps

Male Pins

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Terminal Device

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7060X and 7260X Series 10/25/40/50/100G Data Center Switches

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