N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free