Rectifier Diode Module

Rectifier Diode Module

Rectifier Diode Module

可控硅/二极管模块

50 mm PowerBLOCK 整流器二极管模块使用绝缘铜基板，采用高可靠性的压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电气绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

可控硅/二极管模块

50 mm PowerBLOCK 整流器二极管模块使用绝缘铜基板，采用高可靠性的压接技术设计和组装。 • 具有高可靠性的压接技术\n• 工业标准封装\n• 电气绝缘基板\n• 故障时短路\n• 具有高稳健性\n\n优势:\n• 故障保护\n• 防止电弧失效\n• 易于安装\n• 由于高过载能力，可实现无熔丝设计\n• UL 认证;

封装/外壳：模块 包装：卷带（TR） 描述：DIODE GP 2.2KV 260A BG-PB50ND-1 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：模块 包装：卷带（TR） 描述：DIODE GP 2.6KV 260A BG-PB50ND-1 分立半导体产品 二极管 - 整流器 - 单

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ @ IC = 4A • Collector–Emitter Su

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Speed Differential Comparators

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